IRLML6402 datasheet(1/5 Pages) LEIDITECH

номер детали	IRLML6402

подробное описание детали	-20V P-Channel Enhancement Mode MOSFET

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производитель	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

домашняя страница	http://www.leiditech.com

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-20V P-Channel Enhancement Mode MOSFET

Description

General Features

●

Application

●

D

G

S

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

A1SHB

SOT-23

Ø180mm

8 mm

3000 units

Dimensions SOT-23

Pin Configuration

Rev : 01.0

7.2021

1/

www.leiditech.com

VDS = -20V ID

Battery protection

Load switch

Uninterruptible power supply

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

5

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a

Battery protection or in other Switching application.

=-2.3A

RDS(ON) < 150mΩ@ VGS=-4.5V

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-20

V

VGS

Gate-Source Voltage

±12

V

ID

Drain Current-Continuous

-2.3

A

IDM

Drain Current -Pulsed (Note 1)

-10

A

PD

Maximum Power Dissipation

0.7

W

TJ,TSTG

Operating Junction and Storage Temperature Range

-55 To 150

℃

RθJA

Thermal Resistance,Junction-to-Ambient (Note 2)

178

℃/W

IRLML6402

The

uses advanced trench technology

IRLML6402

Аналогичный номер детали - IRLML6402

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International Rectifier	IRLML6402	81Kb / 8P	HEXFET Power MOSFET
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Аналогичное описание - IRLML6402

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Zetex Semiconductors	ZXM62P02E6	203Kb / 7P	20V P-CHANNEL ENHANCEMENT MODE MOSFET
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IRLML6402 датащи(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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Аналогичный номер детали - IRLML6402

Аналогичное описание - IRLML6402

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