IRLML6402 datasheet(2/5 Pages) LEIDITECH

номер детали	IRLML6402

подробное описание детали	-20V P-Channel Enhancement Mode MOSFET

PDF	5 Pages

Scroll/Zoom	100%

производитель	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

домашняя страница	http://www.leiditech.com

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2 / 5 page

Rev : 01.0

7.2021

www.leiditech.com

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Condition

Min

Typ

Max Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V ID=-250μA

-20

IDSS

Zero Gate Voltage Drain Current

VDS=-20V,VGS=0V

-1

μA

IGSS

Gate-Body Leakage Current

VGS=±12V,VDS=0V

±100

VGS(th)

Gate Threshold Voltage

VDS=VGS,ID=-250μA

-0.5

-0.7

-1.2

RDS(ON)

Drain-Source On-State Resistance

VGS=-4.5V, ID=-2 A

135

165

mΩ

VGS=-2.5V, ID=-1.8A

150

185

mΩ

gFS

Forward Transconductance

VDS=-5V,ID=-2A

Clss

Input Capacitance

VDS=-10V,VGS=0V,

F=1.0MHz

290

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

td(on)

Turn-on Delay Time

VDD=-10V, RL=5Ω VGS=-

4.5V,RGEN=3Ω

Turn-on Rise Time

5.0

td(off)

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

VDS=-10V,ID=-2A,

VGS=-4.5V

3.0

Qgs

Gate-Source Charge

0.5

Qgd

Gate-Drain Charge

0.8

VSD

Diode Forward Voltage (Note 3)

VGS=0V,IS=-2A

-1.2

Notes:

1、Repetitive Rating: Pulse width limited by maximum junction temperature.

2、Surface Mounted on FR4 Board, t ≤ 10 sec.

3、Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4、Guaranteed by design, not subject to production

IRLML6402

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