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STA8090EXGA датащи(PDF) 29 Page - STMicroelectronics |
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STA8090EXGA датащи(HTML) 29 Page - STMicroelectronics |
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29 / 42 page ![]() DS11733 Rev 3 29/42 STA8090EXGA Electrical characteristics 41 Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. VINB Backup LDO input supply voltage (1.6 V to 4.3 V) -0.3 4.8 V VINL1 LDO1 input supply voltage (1.6 V to 4.3 V) -0.3 4.8 V VINL2 LDO2 input supply voltage (1.6 V to 4.3 V) -0.3 4.8 V VINM SMPS coil input supply (1.6 V to 4.3 V) -0.3 4.8 V VDD_ANA SMPS input supply (1.6 V to 4.3 V) -0.3 4.8 V VESD-HBM Electrostatic discharge, human body model(1) -2 2 kV VESD-CDM Electrostatic discharge, charge device model(2) -250 250 V 1. Balls sustaining only ±500 V are: A1, A2, A9, A10, A11, A12, A13, B1, B2, B13, C1, C2, D1, E1, E2, E10, E11, F1, N11, N12, N13. 2. Ball N10 (LNA_IN) sustains only ±100 V. Table 13. Voltage characteristics (continued) Symbol Parameter Min. Max. Unit Table 14. Thermal characteristics Symbol Parameter Min. Max. Unit Toper Operative temperature range -40 85 °C Tj Operative junction temperature -40 125 °C Tst Storage temperature -55 150 °C Rj-amb Thermal resistance junction to ambient(1) 1. According to JEDEC specification on a 2 layers board. —41 °C/W Table 15. Frequency limits Symbol Parameter Test condition Min. Typ. Max. Unit FCLK Operating ARM9 CPU frequency V DDD =1.2 V; TC =85 °C(1) 1. Not tested in production. —— 196 MHz FAHB AHB frequency — — 49 MHz |
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