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L99DZ200G датащи(PDF) 45 Page - STMicroelectronics

номер детали L99DZ200G
подробное описание детали  Automotive front door device with LIN and CAN providing dual H-bridge driving
PDF  198 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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L99DZ200G датащи(HTML) 45 Page - STMicroelectronics

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DS13220 Rev 5
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L99DZ200G
Electrical specifications
197
3.4.16
Drain source monitoring external H-bridges
The voltages are referred to power ground and currents are assumed positive, when the
current flows into the pin. 6 V ≤ VS ≤ 28 V; 6 V ≤ VSREG ≤ 28 V; Tj = -40°C to 150 °C, unless
otherwise specified.
3.4.17
Drain source monitoring external heater MOSFET
The voltages are referred to power ground and currents are assumed positive, when the
current flows into the pin. 6 V ≤ VS ≤ 28 V; 6 V ≤ VSREG ≤ 28 V; Tj = -40 °C to 150 °C, unless
otherwise specified.
Table 23. Drain source monitoring external H-bridge
Item
Symbol
Parameter
Test condition
Min.
Typ.
Max.
Unit
A.110
VSCd1_HB
Drain-source threshold voltage
0.375
0,5
0.625
V
A.111
VSCd2_HB
Drain-source threshold voltage
0.6
0,75
0.9
V
A.112
VSCd3_HB
Drain-source threshold voltage
0,85
1
1,15
V
A.113
VSCd4_HB
Drain-source threshold voltage
1,06
1,25
1,43
V
A.114
VSCd5_HB
Drain-source threshold voltage
1,27
1,5
1,73
V
A.115
VSCd6_HB
Drain-source threshold voltage
1,49
1,75
2,01
V
A.116
VSCd7_HB
Drain-source threshold voltage
1,7
2
2,3
V
A.117
tSCd_HB
Drain-source monitor filter time
Tested by scan
6
µs
A.118
tscs_HB
Drain-source comparator settling
time
VS = 13.5 V;
VSH = jump from
GND to VS
5µs
Table 24. Drain source monitoring external heater MOSFET
Item
Symbol
Parameter
Test condition
Min.
Typ.
Max.
Unit
A.119
VSCd1_HE
Drain-source threshold voltage
160
200
250
mV
A.120
VSCd2_HE
Drain-source threshold voltage
200
250
305
mV
A.121
VSCd3_HE
Drain-source threshold voltage
240
300
360
mV
A.122
VSCd4_HE
Drain-source threshold voltage
280
350
420
mV
A.123
VSCd5_HE
Drain-source threshold voltage
320
400
480
mV
A.124
VSCd6_HE
Drain-source threshold voltage
360
450
540
mV
A.125
VSCd7_HE
Drain-source threshold voltage
400
500
600
mV
A.126
VSCd8_HE
Drain-source threshold voltage
440
550
660
mV
A.127
tSCd_HE
Drain-source monitor filter
time
Tested by scan
6
µs
A.128
tscs_HE
Drain-source comparator
settling time
VS = 13.5 V; VSH = jump
from GND to VS
5µs
A.129
tscbl_HE
Drain-source monitoring
blanking time
Tested by scan
8
µs



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