1

Electrical ratings

1.1

IGBT

Limiting values at TJ = 25 °C, unless otherwise specified.

Table 1. Absolute maximum ratings of the IGBT

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (VGE = 0 V)

1200

V

IC

Continuous collector current (TC = 100 °C)

35

A

ICP(1)

Pulsed collector current (tp = 1 ms)

70

A

VGE

Gate-emitter voltage

±20

V

PTOT

Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C)

250

W

TJMAX

Maximum junction temperature

175

°C

TJop

Operating junction temperature range under switching conditions

-40 to 150

°C

1. Pulse width limited by maximum junction temperature.

Table 2. Electrical characteristics of the IGBT

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter breakdown

voltage

IC = 1 mA, VGE = 0 V

1200

V

VCE(sat)

(terminal)

Collector-emitter saturation

voltage

VGE = 15 V, IC= 35 A

1.95

2.45

V

VGE = 15 V, IC = 35 A,

TJ = 150 ˚C

2.3

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

5

6

7

V

ICES

Collector cut-off current

VGE = 0 V, VCE = 1200 V

100

µA

IGES

Gate-emitter leakage current

VCE = 0 V, VGE = ± 20 V

± 500

nA

Cies

Input capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0 V

2154

pF

Coes

Output capacitance

164

pF

Cres

Reverse transfer capacitance

86

pF

Qg

Total gate charge

VCC = 960 V, IC = 35 A,

VGE = ±15 V

163

nC

td(on)

Turn-on delay time

VCC = 600 V, IC = 35 A,

RG = 10 Ω, VGE = ±15 V,

di/dt = 1900 A/µs

122

ns

tr

Current rise time

17

ns

Eon(1)

Turn-on switching energy

1.21

mJ

td(off)

Turn-off delay time

VCC = 600 V, IC = 35 A,

RG = 10 Ω, VGE = ±15 V,

dv/dt = 7800 V/µs

142

ns

tf

Current fall time

150

ns

Eoff(2)

Turn-off switching energy

2.19

mJ

A1P35S12M3

Electrical ratings

DS11635 - Rev 5

page 2/15