9435 datasheet(1/5 Pages) TUOFENG

номер детали	9435

подробное описание детали	SOP-8 Plastic-Encapsulate MOSFETS

PDF	5 Pages

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производитель	TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]

домашняя страница	http://www.sztuofeng.com/?lang=en

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v1.0

1

P-Channel Enhancement Mode Power MOSFET

Description

The 9435 uses advanced trench technology to provide

excellent RDS

, low gate charge and operation with gate

voltages as low as 4.5V.

(ON)

●

General Features

●

V S = -30V

D

RDS

< 85mΩ @ VGS=-4.5V

RDS

< 57mΩ @ VGS=-10V

High power and current handing capability

Lead free product is acquired

Surface mount package

Application

●

Battery Switch

Load switch

Power management

bsolute Maximum Ratings (TA=25℃unless otherwise noted)

bol

Limit

Unit

A

Parameter

Sym

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

±20

V

-5.3

TA =25℃

Continuous Drain Current (TJ =150℃)

ID

A

Drain Current-Pulsed

(Note 1)

IDM

A

-20

Maximum Power Dissipation

PD

2.0

W

Operating Junction and Storage Temperature Range

T

G

-55

50

J,TST

To 1

℃

Thermal Characteristic

-Ambient

(Note 2)

RθJA

50

/W

℃

Thermal Resistance,Junction-to

= -5.3A

D

I

= -4.2A

D

I

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOP-8 Plastic-Encapsulate MOSFETS

9435

SOP-8

Equivalent Cir cuit

MARKING

9435

o

TFCYWP

Y :year code W :week code

SD

S

D

SD

G

D

5

6

7

8

Top View

2

3

4

1

S

G

D

Аналогичный номер детали - 9435

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GUANGDONG HOTTECH INDUS...	9435	1Mb / 5P	P-Channel Enhancement Mode Power MOSFET
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Аналогичное описание - 9435

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Аналогичный номер детали - 9435

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