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9435 датащи(PDF) 3 Page - Shenzhen Tuofeng Semiconductor Technology Co

номер детали 9435
подробное описание детали  SOP-8 Plastic-Encapsulate MOSFETS
PDF  5 Pages
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производитель  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
домашняя страница  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

9435 датащи(HTML) 3 Page - Shenzhen Tuofeng Semiconductor Technology Co

  9435 Datasheet HTML 1Page - Shenzhen Tuofeng Semiconductor Technology Co 9435 Datasheet HTML 2Page - Shenzhen Tuofeng Semiconductor Technology Co 9435 Datasheet HTML 3Page - Shenzhen Tuofeng Semiconductor Technology Co 9435 Datasheet HTML 4Page - Shenzhen Tuofeng Semiconductor Technology Co 9435 Datasheet HTML 5Page - Shenzhen Tuofeng Semiconductor Technology Co  
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v1.0
3
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOP-8 Plastic-Encapsulate MOSFETS
0.0
2.5
5.0
7.5 10.0 12.5 15.0 17.5 20.0
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
02
468
10
0
5
10
15
20
-50
-25
0
25
50
75
100
125
150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
012
345
0
5
10
15
20
Typical Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
Transfer Characteristics
-VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
Tj - Junction Temperature (°C)
On-Resistance vs. Drain Current
-VGS=4.5V
-ID - Drain Current (A)
-VGS=10V
-IDS=250
µA
Output Characteristics
-VDS - Drain-to-Source Voltage (V)
-VGS=4V
-VGS=5,6,7,8,9,10V
-VGS=3V
123456
789
10
0.00
0.05
0.10
0.15
0.20
0.25
0.30
-50
-25
0
25
50
75
100
125
150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
-VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
TJ - Junction Temperature (°C)
-VGS=10V
-ID=4.6A
-ID=4.6A
9435



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