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INT датащи(PDF) 4 Page - Vishay Siliconix

номер детали INT
подробное описание детали  Custom Substrates - Metal Via / Multilayer / Lumped Element
PDF  6 Pages
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производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

INT датащи(HTML) 4 Page - Vishay Siliconix

  INT Datasheet HTML 1Page - Vishay Siliconix INT Datasheet HTML 2Page - Vishay Siliconix INT Datasheet HTML 3Page - Vishay Siliconix INT Datasheet HTML 4Page - Vishay Siliconix INT Datasheet HTML 5Page - Vishay Siliconix INT Datasheet HTML 6Page - Vishay Siliconix  
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INT
www.vishay.com
Vishay Electro-Films
Revision: 14-Sep-2018
4
Document Number: 61112
For technical questions, contact: efi@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MULTILAYER AND AIR BRIDGE
For certain complex designs multiple layers of metal and / or interlevel dielectrics are required. Vishay Electro-Films has
developed precision patterning and layering techniques where ± 0.0001" pattern tolerance and ± 0.0005" layer to layer
alignment is achievable.
For Multilayer designs that require an interlevel dielectric the following two choice are currently available:
Note
(1) Silicon nitride can also be used to integrate a capacitive element to the design if needed
In applications where lange couplers and cross-metal patterning are needed, air bridges can be used to connect different metal
patterns using polyimide supported bridges. These bridges require several design guidelines for layering the base metal,
polyimide, and bridge metal into the optimum air bridge design.
Fig. 3 can be used as a guideline for a typical lange coupler / air bridge set-up. The dimensions listed in the bubble detail picture
are considered minimums for any design. For more specific design layout guidelines, contact the factory for more information.
Note
• These rules apply to the non-vented via side
Fig. 3
DIELECTRIC
TYPICAL THICKNESS
PATTERN TOLERANCE
DIELECTRIC CONSTANT
Silicon nitride (1)
4000 Å to 6000 Å
± 0.002"
-
Polyimide
50 000 Å to 80 000 Å
± 0.002"
3.2 at 1 MHz
MULTI-LEVEL CROSSOVER DESIGN PARAMETERS
PARAMETER
MINIMUM VALUE
(in μm)
COMMENTS
Dimension
Crossover thickness
0.0001 (2.5)
Minimum
A
Crossover width
0.001 (25)
0.0001 in crossover to conductor pullback
B
Crossover length
0.003 (75)
Minimum
C / D
Insulator dimension
Length: 0.0015 (37.5)
Width: 0.003 (76)
0.0025 (63)
insulator-to-conductor overlap
Insulator material
Polyimide
E / F
Encapsulation dimension
Crossover width: +0.0015 (37.5)
Crossover length: +0.003 (76)
These values are added to the
insulator dimension
Encapsulation material
Polyimide
E
D
B
C
A
F



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