SSM6P35AFU

2

4. Absolute Maximum Ratings (Note)

Characteristics

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

Channel temperature

Storage temperature

(Note 1)

(Note 1)

(Note 2)

Symbol

Rating

-20

±10

-250

-600

285

150

-55 to 150

Unit

V

mA

mW

�

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Ensure that the channel temperature does not exceed 150 �.

Note:

This transistor is sensitive to electrostatic discharge and should be handled with care.

Note:

The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables,

operators, soldering irons and other objects should be protected against anti-static discharge.

Note:

the board material, board area, board thickness and pad area. When using this device, be sure to take heat

dissipation fully into account.

Apply voltage

±2000 V

Failure

0/10 pcs

Test conditions

C = 100 pF, R = 1.5 kΩ

(JEITA ED-4701)

Note:

Conducted Electrostatic Discharge Test based on JEITA ED-4701 standard, and confirmed above result.

2021-02-01

Rev.3.0

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Toshiba Electronic Devices & Storage Corporation