QPD1016L

DC

– 1.7 GHz, 50 V, 500 W GaN RF Transistor

Datasheet Rev. A, September 2020 | Subject to change without notice

- 16 of 23 -

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Notes:

1. Refer to the following document GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates

Thermal and Reliability Information

Conditions

Values

Units

Thermal Resistance, IR

85 °C Case

94.5 W Pdiss, CW

0.34

°C/W

117

°C

Thermal Resistance, IR

85 °C Case

189 W Pdiss, CW

0.37

°C/W

154

°C

Thermal Resistance, IR

85 °C Case

284 W Pdiss, CW

0.39

°C/W

196

°C

Thermal Resistance, IR

85 °C Case

378 W Pdiss, CW

0.42

°C/W

242

°C

100

120

140

160

180

200

220

240

260

280

75 100 125 150 175 200 225 250 275 300 325 350 375 400 425 450

CW Power Dissipation [W]

Peak IR Surface Temperature vs. CW Power

Base Temperature at 85 C