QPD1016LEVB01 datasheet(1/24 Pages) QORVO

номер детали	QPD1016LEVB01

подробное описание детали	DC – 1.7 GHz, 50 V, 500 W GaN RF Transistor

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производитель	QORVO [Qorvo, Inc]

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QPD1016L

DC

– 1.7 GHz, 50 V, 500 W GaN RF Transistor

Datasheet Rev. A, September 2020 | Subject to change without notice

- 1 of 23 -

www.qorvo.com

NI-780 Package

Product Overview

The Qorvo QPD1016L is a 500 W (P3dB) pre-matched

discrete GaN on SiC HEMT which operates from DC to 1.7

GHz and 50 V supply. The device is in an industry standard

air cavity package and is ideally suited for IFF, avionics,

military and civilian radar, and test instrumentation.

The

device can support pulsed and linear operations.

ROHS compliant.

Evaluation boards are available upon request.

Functional Block Diagram

Key Features

• Frequency: DC to 1.7 GHz

• Output Power (P3dB): 537 W

• Linear Gain: 18 dB

• Typical Drain Efficiency at 3 dB compresion: 67%

• Operating Voltage: 50 V

• CW and Pulse capable

Applications

• IFF

• Avionics

• Military and civilian radar

• Test instrumentation

Ordering info

Part No.

Description

QPD1016L

DC – 1.7 GHz, 50 V, 500 W GaN

RF Transistor

QPD1016LS1

Sample bag

– 1 piece

QPD1016LS2

Sample bag

– 2 piece

QPD1016LEVB01

1.2

– 1.4 GHz EVB

Аналогичный номер детали - QPD1016LEVB01

производитель	номер детали	датащи	подробное описание детали
TriQuint Semiconductor	QPD1016	1Mb / 25P	50 V, 500 W GaN RF Transistor
Qorvo, Inc	QPD1016	1Mb / 24P	DC ??1.7 GHz, 50 V, 500 W GaN RF Transistor August 17, 2018
TriQuint Semiconductor	QPD1016EVB01	1Mb / 25P	50 V, 500 W GaN RF Transistor
Qorvo, Inc	QPD1016EVB01	1Mb / 24P	DC ??1.7 GHz, 50 V, 500 W GaN RF Transistor August 17, 2018

More results

Аналогичное описание - QPD1016LEVB01

производитель	номер детали	датащи	подробное описание детали
Cree, Inc	CGHV40050F	866Kb / 11P	50 W, DC - 4.0 GHz, 50 V, GaN HEMT Rev 1.0
TriQuint Semiconductor	QPD1016	1Mb / 25P	50 V, 500 W GaN RF Transistor
Cree, Inc	CGHV40050	2Mb / 11P	50 W, DC - 4.0 GHz, 50 V, GaN HEMT
Qorvo, Inc	TGF2977-SM	2Mb / 28P	DC ??12 GHz, 32 V, 5 W GaN RF Transistor
	TGF2933	4Mb / 24P	DC ??25 GHz, 28 V, 7 W GaN RF Transistor
	TGF2934	3Mb / 24P	DC ??25 GHz, 28 V, 14 W GaN RF Transistor
	QPD1881L	1Mb / 18P	400 W, 50 V, 2.7 ??2.9 GHz, GaN RF Power Transistor
	QPD1016	1Mb / 24P	DC ??1.7 GHz, 50 V, 500 W GaN RF Transistor August 17, 2018
	T1G4020036-FS	1Mb / 18P	DC ??3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor September, 2021
WOLFSPEED, INC.	CGHV40050	2Mb / 11P	50 W, DC - 4.0 GHz, 50 V, GaN HEMT Rev. 2.4, 2022-12-2

More results

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Аналогичный номер детали - QPD1016LEVB01

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