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QPD1016LS2 датащи(PDF) 12 Page - Qorvo, Inc

номер детали QPD1016LS2
подробное описание детали  DC – 1.7 GHz, 50 V, 500 W GaN RF Transistor
PDF  24 Pages
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производитель  QORVO [Qorvo, Inc]
домашняя страница  https://www.qorvo.com/
Logo QORVO - Qorvo, Inc

QPD1016LS2 датащи(HTML) 12 Page - Qorvo, Inc

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QPD1016L
DC
– 1.7 GHz, 50 V, 500 W GaN RF Transistor
Datasheet Rev. A, September 2020 | Subject to change without notice
- 12 of 23 -
www.qorvo.com
Typical Measured Performance
– Load-Pull Drive-up1, 2
Notes:
1. Test Conditions: VD = 50 V, IDQ = 1000 mA, 300 uS Pulse Width, 10% Duty Cycle
2. See
”Pin Configuration and Description” for load pull and source pull reference planes..
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Output Power [dBm]
Gain and PAE vs. Output Power
1.5 GHz - Power Tuned
Zs(1fo) = 0.51-1.43i
Zs(2fo) = 1.66-0.36i
Zs(3fo) = 3.88-0.01i
Zl(1fo) = 1.75-0.95i
Zl(2fo) = 1.9+0.4i
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Gain
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Output Power [dBm]
Gain and PAE vs. Output Power
1.5 GHz - Efficiency Tuned
Zs(1fo) = 0.51-1.43i
Zs(2fo) = 1.66-0.36i
Zs(3fo) = 3.88-0.01i
Zl(1fo) = 1.65-0.24i
Zl(2fo) = 1.9+0.4i
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Output Power [dBm]
Gain and PAE vs. Output Power
1.7 GHz - Power Tuned
Zs(1fo) = 1.06-2.58i
Zs(2fo) = 3.35-0.26i
Zl(1fo) = 1.35-1.16i
Zl(2fo) = 3.29+0.08i
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Output Power [dBm]
Gain and PAE vs. Output Power
1.7 GHz - Efficiency Tuned
Zs(1fo) = 1.06-2.58i
Zs(2fo) = 3.35-0.26i
Zl(1fo) = 1.13-0.65i
Zl(2fo) = 3.29+0.07i
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