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QPD1016LS2 датащи(PDF) 11 Page - Qorvo, Inc

номер детали QPD1016LS2
подробное описание детали  DC – 1.7 GHz, 50 V, 500 W GaN RF Transistor
PDF  24 Pages
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производитель  QORVO [Qorvo, Inc]
домашняя страница  https://www.qorvo.com/
Logo QORVO - Qorvo, Inc

QPD1016LS2 датащи(HTML) 11 Page - Qorvo, Inc

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QPD1016L
DC
– 1.7 GHz, 50 V, 500 W GaN RF Transistor
Datasheet Rev. A, September 2020 | Subject to change without notice
- 11 of 23 -
www.qorvo.com
Typical Measured Performance
– Load-Pull Drive-up1, 2
Notes:
1. Test Conditions: VD = 50 V, IDQ = 1000 mA, 300 uS Pulse Width, 10% Duty Cycle
2. See
”Pin Configuration and Description” for load pull and source pull reference planes.
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Output Power [dBm]
Gain and PAE vs. Output Power
1.3 GHz - Power Tuned
Zs(1fo) = 0.47-1.02i
Zs(2fo) = 1.33-3.6i
Zs(3fo) = 3.08+0.02i
Zl(1fo) = 1.39-0.69i
Zl(2fo) = 5.58+7.55i
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Output Power [dBm]
Gain and PAE vs. Output Power
1.3 GHz - Efficiency Tuned
Zs(1fo) = 0.47-1.02i
Zs(2fo) = 1.33-3.6i
Zs(3fo) = 3.08+0.02i
Zl(1fo) = 1.51+0.22i
Zl(2fo) = 5.53+7.53i
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Output Power [dBm]
Gain and PAE vs. Output Power
1.4 GHz - Power Tuned
Zs(1fo) = 0.38-1.38i
Zs(2fo) = 0.82-2i
Zs(3fo) = 2.44+1.76i
Zl(1fo) = 1.38-0.68i
Zl(2fo) = 5.56+7.59i
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Output Power [dBm]
Gain and PAE vs. Output Power
1.4 GHz - Efficiency Tuned
Zs(1fo) = 0.38-1.38i
Zs(2fo) = 0.82-2i
Zs(3fo) = 2.44+1.76i
Zl(1fo) = 1.38-0.35i
Zl(2fo) = 5.52+7.69i
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