IRF830AS, IRF830AL, SiHF830AS, SiHF830AL

www.vishay.com

Vishay Siliconix

S21-0901-Rev. D, 30-Aug-2021

1

Document Number: 91062

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Power MOSFET

FEATURES

requirement

• Improved gate, avalanche and dynamic dV/dt

ruggedness

• Fully characterized capacitance and avalanche

voltage and current

• Material categorization: for definitions of compliance

Note

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

APPLICATIONS

• Switch mode power supply (SMPS)

• Uninterruptible power supply

• High speed power switching

TYPICAL SMPS TOPOLOGIES

• Two transistor forward

• Half bridge and full bridge

Note

a. See device orientation

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

d. 1.6 mm from case

e. Uses SiHF830A data and test conditions

PRODUCT SUMMARY

500

1.40

24

6.3

11

Configuration

Single

N-Channel MOSFET

G

D

S

G

D

S

G

D

S

Available

Available

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

SiHF830AS-GE3

Lead (Pb)-free

IRF830ASPbF

IRF830ALPbF

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

500

V

Gate-Source Voltage

± 30

Continuous Drain Current

5.0

A

3.2

20

Linear Derating Factor

0.59

W/°C

230

mJ

Avalanche Currenta

5.0

A

7.4

mJ

Maximum Power Dissipation

3.1

W

74

dV/dt

5.3

V/ns

Operating Junction and Storage Temperature Range

-55 to +150

°C

for 10 s

300