IRF830AS datasheet(4/10 Pages) VISHAY

4 / 10 page

IRF830AS, IRF830AL, SiHF830AS, SiHF830AL

www.vishay.com

Vishay Siliconix

S21-0901-Rev. D, 30-Aug-2021

Document Number: 91062

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

102

VSD, Source-to-Drain Voltage (V)

0.2

1.0

0.8

0.6

0.4

GS = 0 V

91062_07

J = 25 °C

J = 150 °C

0.1

1.2

10 µs

100 µs

1 ms

10 ms

Operation in this area limited

by R

DS(on)

VDS, Drain-to-Source Voltage (V)

C = 25 °C

J = 150 °C

Single Pulse

102

0.1

102

103

104

91062_08

TC, Case Temperature (°C)

0.0

1.0

2.0

3.0

4.0

5.0

150

125

100

91062_09

Pulse width

≤ 1 µs

Duty factor

≤ 0.1 %

D.U.T.

10 V

90 %

10 %

d(on)

d(off)

0.1

10-2

10-5

10-4

10-3

10-2

0.1

t1, Rectangular Pulse Duration (s)

Notes:

1. Duty Factor, D = t

1/t2

2. Peak T

j = PDM x ZthJC + TC

Single Pulse

(Thermal Response)

D = 0.50

0.20

0.05

0.02

0.01

91062_11

0.10

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