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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ALD1102ASAL датащи(PDF) 2 Page - ADL Embedded Solutions |
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ALD1102ASAL датащи(HTML) 2 Page - ADL Embedded Solutions |
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2 / 7 page  ALD1102A/ALD1102B/ALD1102 Advanced Linear Devices 2 of 7 Gate Threshold Voltage VT -0.4 -0.7 -1.2 -0.4 -0.7 -1.2 -0.4 -0.7 -1.2 V IDS = -10µA VGS = VDS Offset Voltage VOS 2 5 10 mV IDS = -100µA VGS = VDS VGS1 - VGS2 Gate Threshold TCVT -1.3 -1.3 -1.3 mV/°C Temperature Drift On Drain Current IDS(ON) -8 -16 -8 -16 -8 -16 mA VGS = VDS = -5V Transconductance Gfs 2 4 2 4 2 4 mmho VDS = -5V IDS = -10mA Mismatch ∆Gfs 0.5 0.5 0.5 % Output GOS 500 500 500 µmho VDS = -5V IDS = -10mA Conductance Drain Source RDS(ON) 180 270 180 270 180 270 Ω VDS = -0.1V VGS = -5V ON Resistance Drain Source ON Resistance ∆RDS(ON) 0.5 0.5 0.5 % VDS = -0.1V VGS = -5V Mismatch Drain Source Breakdown BVDSS -10 -10 -10 V IDS = -10µA VGS = 0V Voltage Off Drain Current IDS(OFF) 0.1 4 0.1 4 0.1 4 nA VDS = -10V VGS = 0V 44 4 µATA = 125°C Gate Leakage IGSS 1 100 1 100 1 100 pA VDS = 0V VGS = -10V Current 10 10 10 nA TA = 125°C Input CISS 610 6 10 6 10 pF Capacitance OPERATING ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified ALD1102A ALD1102B ALD1102 Test Parameter Symbol Min Typ Max Min Typ Max Min Typ Max Unit Conditions Drain-source voltage, VDS -10V Gate-source voltage, VGS -10V Power dissipation 500mW Operating temperature range SAL, PAL packages 0°C to +70°C Storage temperature range -65°C to +150°C Lead temperature, 10 seconds +260°C CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. ABSOLUTE MAXIMUM RATINGS |
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