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TF207P датащи(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

номер детали TF207P
подробное описание детали  P-Channel -20V(D-S) MOSFET
PDF  6 Pages
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производитель  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
домашняя страница  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

TF207P датащи(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

  TF207P Datasheet HTML 1Page - Shenzhen Tuofeng Semiconductor Technology Co TF207P Datasheet HTML 2Page - Shenzhen Tuofeng Semiconductor Technology Co TF207P Datasheet HTML 3Page - Shenzhen Tuofeng Semiconductor Technology Co TF207P Datasheet HTML 4Page - Shenzhen Tuofeng Semiconductor Technology Co TF207P Datasheet HTML 5Page - Shenzhen Tuofeng Semiconductor Technology Co TF207P Datasheet HTML 6Page - Shenzhen Tuofeng Semiconductor Technology Co  
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SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
2
MOSFET ELECTRICAL CHARACTERISTICS
SOT-23-3L Plastic-Encapsulate MOSFETS
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC CHARACTERICTISCS
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =250µA
- 20
V
Zero gate voltage drain current
IDSS
VDS =-18V,V GS = 0V
Gate-body leakage current
IGSS
VGS =±12V, VDS = 0V
±100
nA
Gate threshold voltage (note 3)
VGS(th)
VDS =VGS, ID =-250µA
-0.5
V
Drain-source on-resistance (note 3)
RDS(on)
VGS =-4.5V, ID =-6A
21
mΩ
VGS =-2.5V, ID =-5A
30
mΩ
Forward tranconductance (note 3)
gFS
VDS =-5V, I D =-6A
17
S
Diode forward voltage (note 3)
VSD
IS=-2.0A, V GS = 0V
-1.0
V
DYNAMIC CHARACTERICTISCS (note4)
Input Capacitance
Ciss
VDS =-10V,VGS =0V,f =1MHz
1687
pF
Output Capacitance
Coss
350
pF
Reverse Transfer Capacitance
Crss
260
pF
SWITCHING CHARACTERICTISCS (note 4)
Turn-on delay time
td(on)
25
ns
Turn-on rise time
tr
30
ns
Turn-off delay time
td(off)
70
ns
Turn-off fall time
tf
50
ns
Total Gate Charge
Qg
VDS =-10V,VGS =-4.5V,ID=-6A
17
nC
Gate-Source Charge
Qgs
4.1
nC
Gate-Drain Charge
Qgd
4.3
nC
Notes :
1.Repetitive rating：Pluse width limited by maximum junction temperature
2.Surface Mounted on FR4 board，t≤10 sec.
3. Pulse test : Pulse width≤300μs, duty cycle≤2%.
4. Guaranteed by design, not subject to production.
-1.0
19
17
-500
nA
15
17
TF207P
-
VDD=-10V, RL=10Ω,
VGS=-4.5V,RGEN=6Ω
-0.62
Dec 2020 V1.1



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