TF207P datasheet(1/6 Pages) TUOFENG

номер детали	TF207P

подробное описание детали	P-Channel -20V(D-S) MOSFET

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1

P-Channel 20

- V(D-S) MOSFET

SOT-23-3L

1.GATE

2.SOURCE

3.DRAIN

w

1

2

3

TF207P

207P

SOT-23-3L Plastic-Encapsulate MOSFETS

TF207P

Y

Dec 2020 V1.1

ABSOLUTE MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDS

20

Gate-Source Voltage

VGS

±12

-9

V

Continuous Drain Current

ID

A

Pulsed Drain Current (note 1)

IDM

-25

A

Thermal Resistance from Junction to Ambient (note 2)

RθJA

100

℃/W

Junction Temperature

TJ

150

℃

Storage Temperature

TSTG

-55~+150

℃

Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)

TL

260

℃

V

V(BR)DSS

RDS(on)

ID

20V

17mΩ @ 4.5V

- 9.0A

19mΩ @ 2.5V

MARKING

Equivalent Circuit

FEATURE

TrenchFET Power MOSFET

Excellent RDS(on)

Low Gate Charge

High Power and Current Handing Capability

Surface Mount Package

APPLICATION

Load Switch

Power Management

Max

Y :year code W :week code

-

G

D

S

-

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