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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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4611 датащи(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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4611 датащи(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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2 / 8 page  Symbol Min Typ Max Units BVDSS 60 V 1 IGSS 100 nA VGS(th) 1.5 2.1 3 V ID(ON) 40 A 35 Ω gFS 27 S VSD 0.74 1 V IS 3 A Ciss 1920 2300 pF Coss 155 pF Crss 116 pF Rg 0.65 0.8 Ω Qg(10V) 47.6 58 nC Qg(4.5V) 24.2 30 nC Qgs 6 nC Qgd 14.4 nC tD(on) 7.6 ns tr 5 ns tD(off) 28.9 ns tf 5.5 ns trr 33.2 40 ns Qrr 43 nC Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Body Diode Reverse Recovery Charge Total Gate Charge IF=6.3A, dI/dt=100A/µs Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time IF=6.3A, dI/dt=100A/µs Input Capacitance N Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=48V, VGS=0V µA Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA On state drain current VGS=10V, VDS=5V RDS(ON) Static Drain-Source On-Resistance Forward Transconductance m Ω VGS=4.5V, ID=5.7A VDS=5V, ID=6.3A IS=1A,VGS=0V VGS=10V, ID=6.3A Diode Forward Voltage VGS=10V, VDS=30V, RL=4.7Ω, RGEN=3Ω Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Total Gate Charge VGS=10V, VDS=30V, ID=6.3A VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Reverse Transfer Capacitance Gate resistance Output Capacitance A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev5: Nov. 2010 45 40 Page v1.0 2 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4611 www.sztuofeng.com 30 |
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