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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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4611 датащи(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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4611 датащи(HTML) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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1 / 8 page  Symbol Max p-channel Units VDS V VGS V IDM TJ, TSTG °C Symbol Device Typ Max Units n-ch 48 62.5 °C/W n-ch 74 110 °C/W RθJL n-ch 35 60 °C/W p-ch 48 62.5 °C/W p-ch 74 110 °C/W RθJL p-ch 35 40 °C/W Maximum Junction-to-Lead C Steady-State Maximum Junction-to-Ambient A t ≤ 10s RθJA Maximum Junction-to-Ambient A Steady-State -30 Power Dissipation TA=25°C PD Steady-State Junction and Storage Temperature Range A Continuous Drain Current A TA=25°C ID Pulsed Drain Current B W 6.3 40 2 -4.9 2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel 60 -60 ±20 Drain-Source Voltage ±20 Gate-Source Voltage Thermal Characteristics: n-channel and p-channel -55 to 150 -55 to 150 Maximum Junction-to-Lead C Steady-State Parameter Maximum Junction-to-Ambient A t ≤ 10s RθJA Maximum Junction-to-Ambient A N and P-Channel Enhancement Mode Power MOSFET Description The 4611 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 60V,ID =6.3A RDS(ON) < 35mΩ @ VGS=10V ● P-Channel VDS = -60V,ID = -4.9A RDS(ON) < 60mΩ @ VGS=-10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram Marking and pin assignment SOP-8 top view N-channel P-channel RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 72mΩ @ VGS=-4.5V Page v1.0 1 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4611 www.sztuofeng.com |
Аналогичный номер детали - 4611 |
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Аналогичное описание - 4611 |
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