QPD1028L

750 W, 65 V, 1.2 – 1.4 GHz, GaN RF Input-Matched Transistor

Data Sheet Rev. C, Oct 2021 | Subject to change without notice

3 of 16

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Parameter

Min

Typ

Max

Units

–

19.8

–

 dB

Output Power at 3dB compression point, P3dB

–

59.2

–

dBm

Drain Efficiency at 3dB compression point, DEff3dB

–

67.3

–

%

Gain at 3dB compression point, G3dB

–

16.8

–

dB

-40

–

–

mA

Notes:

1.

RF Characterization

Symbol Parameter

dB Compression

Typical

VSWR

Impedance Mismatch Ruggedness

3

 10:1

Notes

:

1.

2.

Input drive power is determined at pulsed 3dB compression under matched condition at EVB output connector

3.

Pulse Width = 100us, Duty cycle = 10%

RF Characterization