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QPD1028LEVB датащи(PDF) 1 Page - Qorvo, Inc |
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QPD1028LEVB датащи(HTML) 1 Page - Qorvo, Inc |
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1 / 16 page ![]() QPD1028L 750 W, 65 V, 1.2 – 1.4 GHz, GaN RF Input-Matched Transistor Data Sheet Rev. C, Oct 2021 | Subject to change without notice 1 of 16 www.qorvo.com ® Ni-780 Package Key Features • Frequency Range: 1.2 to 1.4 GHz • Linear Gain1: 19.8 dB • Output Power (P3dB)1: 838.5 W • Drain Efficiency (P3dB)1: 67.3% • Operating Voltage: 65 V • CW and Pulse capable Note 1: EVB Performance @ 1.3 GHz Product Overview The Qorvo QPD1028L is a 750 W (P3dB) discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz. Input pre- match within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for radar. The device can support both CW and pulsed operations. Evaluation boards are available upon request. Functional Block Diagram Ordering Information Applications • L-Band Radar Part No. Description QPD1028L 1.2 – 1.4 GHz Transistor (18 pcs in tray) QPD1028LEVB 1.2 – 1.4 GHz Evaluation Board |
Аналогичный номер детали - QPD1028LEVB |
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Аналогичное описание - QPD1028LEVB |
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