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ADM3050EBRIZ датащи(PDF) 17 Page - Analog Devices

номер детали ADM3050EBRIZ
подробное описание детали  5.7 kV rms, Signal Isolated, Basic CAN FD Transceiver
PDF  19 Pages
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производитель  AD [Analog Devices]
домашняя страница  http://www.analog.com
Logo AD - Analog Devices

ADM3050EBRIZ датащи(HTML) 17 Page - Analog Devices

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Data Sheet
ADM3050E
Rev. B | Page 17 of 19
APPLICATIONS INFORMATION
RADIATED EMISSIONS AND PCB LAYOUT
The ADM3050E isolated CAN transceivers with integrated
dc-to-dc converters pass EN 55022, Class B by 6 dB on a simple
2-layer PCB design. Neither stitching capacitance nor high
voltage surface mount (SMT) safety capacitors are required to
meet this emission level.
PCB LAYOUT
The ADM3050E isolated CAN transceiver requires no external
interface circuitry for the logic interfaces. Power supply
bypassing is required at the logic input supply (VDD1), and the
shared CAN transceiver and digital isolator supply pin (VDD2).
The recommended bypass capacitor value is 0.1 μF. Note that
low effective series resistance (ESR) bypass capacitors are
required and must be placed as close to the chip pads as possible.
The total lead length between both ends of the capacitor and
the input power supply pin must not exceed 10 mm. Bypassing
between Pin 1, Pin 7, and Pin 8 and between Pin 16, Pin 10, and
Pin 9 must also be considered, unless the ground pair on each
package side is connected in close proximity to the package.
In applications involving high common-mode transients,
minimize board coupling across the isolation barrier. Design
the board layout so that any coupling that does occur equally
affects all pins on a given component side. Failure to ensure this
equal coupling can cause voltage differentials between pins
exceeding the absolute maximum ratings of the device, thereby
leading to latch-up or permanent damage.
ADM3050E
16
9
10
11
12
13
14
15
1
8
7
6
5
4
3
2
VDD1
GND1
GND1
TXD
NC
NC
RXD
GND1
VDD2
GND2
GND2
NC
CANL
CANH
NC
GND2
0.1µF
0.1µF
Figure 25. Recommended 16-Lead SOIC_W PCB Layout
0.1µF
0.1µF
1
TXD
2
RXD
3
GND1
4
VDD1
VDD2 8
CANH 7
CANL 6
GND2 5
ADM3050E
Figure 26. Recommended 8-Lead SOIC_IC PCB Layout
THERMAL ANALYSIS
The ADM3050E device consists of three internal die attached to a
split lead frame. For the purposes of thermal analysis, the die are
treated as a thermal unit, with the highest junction temperature
reflected in the θJA value from Table 10. The θJA value is based on
measurements taken with the devices mounted on a JEDEC
standard, 4-layer board with fine width traces and still air.
INSULATION LIFETIME
All insulation structures eventually break down when subjected
to voltage stress over a sufficiently long period of time. The rate
of insulation degradation is dependent on the characteristics of
the voltage waveform applied across the insulation as well as on
the materials and material interfaces.
The two types of insulation degradation of primary interest are
breakdown along surfaces exposed to the air and insulation
wear out. Surface breakdown is the phenomenon of surface
tracking and is the primary determinant of surface creepage
requirements in system level standards. Insulation wear out
is the phenomenon where charge injection or displacement
currents inside the insulation material cause long-term
insulation degradation.
SURFACE TRACKING
Surface tracking is addressed in electrical safety standards by
setting a minimum surface creepage based on the working
voltage, the environmental conditions, and the properties of the
insulation material. Safety agencies perform characterization
testing on the surface insulation of components, allowing the
components to be categorized in different material groups.
Lower material group ratings are more resistant to surface
tracking and can therefore provide adequate lifetime with
smaller creepage. The minimum creepage for a given working
voltage and material group is in each system level standard and
is based on the total rms voltage across the isolation, pollution
degree, and material group.
The material group and creepage for the ADM3050E isolator is
listed in Table 3 for both the 8-lead, increased creepage SOIC
package option and the 16-lead, wide body SOIC package option.
INSULATION WEAR OUT
The lifetime of insulation caused by wear out is determined by
its thickness, material properties, and the voltage stress applied.
It is important to verify that the product lifetime is adequate at
the application working voltage. The working voltage supported
by an isolator for wear out may not be the same as the working
voltage supported for tracking. The working voltage applicable
to tracking is specified in most standards.
Testing and modeling have shown that the primary driver of
long-term degradation is displacement current in the polyimide
insulation causing incremental damage. The stress on the
insulation can be broken down into broad categories, such as
dc stress, which causes very little wear out because there is no
displacement current, and an ac component time varying
voltage stress, which causes wear out.



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