QPD1008LEVB2 datasheet(1/20 Pages) QORVO

номер детали	QPD1008LEVB2

подробное описание детали	125W, 50V, DC ??3.2 GHz, GaN RF Transistor

PDF	20 Pages

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производитель	QORVO [Qorvo, Inc]

домашняя страница	https://www.qorvo.com/

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QPD1008L

125W, 50V, DC

– 3.2 GHz, GaN RF Transistor

Data Sheet Rev. I, October 2021 | Subject to change without notice

1 of 20

www.qorvo.com

Product Features

• Frequency: DC to 3.2 GHz

• Output Power (P3dB)1: 162 W

• Linear Gain1: 17.5 dB

• Typical DEFF3dB1: 74%

• Operating Voltage: 50 V

• Low thermal resistance package

• CW and Pulse capable

Note: 1 @ 2 GHz

General Description

The QPD1008L is a 125 W (P3dB) wideband unmatched

discrete GaN on SiC HEMT which operates from DC to 3.2

GHz with a 50V supply rail.

The device is in an industry

standard air cavity package and is ideally suited for military

and

civilian

radar,

land

mobile

and

military

radio

communications, avionics, and test instrumentation. The

device can support pulsed, CW, and linear operation.

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Functional Block Diagram

Applications

• Military radar

• Civilian radar

• Land mobile and military radio communications

• Test instrumenation

• Wideband or narrowband amplifiers

• Jammers

• Avionics

Part No.

Description

QPD1008L

DC – 3.2 GHz RF Transistor

QPD1008LPCB4B01

0.96

– 1.215 GHz EVB

QPD1008LEVB2

1.1

– 1.5 GHz EVB

1

2

Аналогичный номер детали - QPD1008LEVB2

производитель	номер детали	датащи	подробное описание детали
Qorvo, Inc	QPD1008	1Mb / 23P	125W, 50V, DC – 3.2 GHz, GaN RF Transistor Rev. E, May 2020
	QPD1008EVB2	1Mb / 23P	125W, 50V, DC – 3.2 GHz, GaN RF Transistor Rev. E, May 2020
	QPD1008PCB4B01	1Mb / 23P	125W, 50V, DC – 3.2 GHz, GaN RF Transistor Rev. E, May 2020

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Аналогичное описание - QPD1008LEVB2

производитель	номер детали	датащи	подробное описание детали
TriQuint Semiconductor	QPD1013	2Mb / 25P	150W, 65V, DC ??2.7 GHz, GaN RF Transistor
	QPD1018	1Mb / 17P	500W, 50V, 2.7 ??3.1 GHz, GaN RF IMFET
	QPD1019	2Mb / 19P	500W, 50V, 2.9 ??3.3 GHz, GaN RF IMFET
	QPD1022	2Mb / 23P	10W, 32V, DC ??12 GHz, GaN RF Transistor
Qorvo, Inc	QPD1009	1Mb / 28P	15W, 50V, DC ??4 GHz, GaN RF Transistor 2019
	QPD1010	2Mb / 25P	10W, 50V, DC ??4 GHz, GaN RF Transistor October 2021
	QPD1015	1Mb / 27P	65W, 50V, DC ??3.7 GHz, GaN RF Transistor 2016
	QPD1015L	1Mb / 27P	65W, 50V, DC ??3.7 GHz, GaN RF Transistor 2016
	QPD1022	2Mb / 22P	10W, 32V, DC ??12 GHz, GaN RF Transistor February 2022
	QPD1013	2Mb / 25P	150W, 65V, DC – 2.7 GHz, GaN RF Transistor 2017

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Аналогичный номер детали - QPD1008LEVB2

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