BLF2425M9L30_M9LS30

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© Ampleon Netherlands B.V. 2019. All rights reserved.

Product data sheet

Rev. 5 — 13 June 2019

9 of 12

BLF2425M9L30; BLF2425M9LS30

Power LDMOS transistor

9. Handling information

[1]

CDM classification C2A is granted to any part that passes after exposure to an ESD pulse of 500 V.

[2]

HBM classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000 V.

10. Abbreviations

11. Revision history

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

Table 10.

ESD sensitivity

ESD model

Class

Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002

C2A [1]

Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001

2 [2]

Table 11.

Abbreviations

Acronym

Description

CW

Continuous Wave

ESD

ElectroStatic Discharge

LDMOS

Laterally Diffused Metal-Oxide Semiconductor

MTF

Median Time to Failure

RoHS

Restriction of Hazardous Substances

SMD

Surface Mounted Device

VSWR

Voltage Standing-Wave Ratio

Table 12.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

BLF2425M9L30_M9LS30 v.5

20190613

Product data sheet

-

BLF2425M9L30_M9LS30 v.4

Modifications:

• Table 9 on page 5: changed C3 value from 0.3 pF V to 0.6 pF

• Table 10 on page 9: added table

BLF2425M9L30_M9LS30 v.4

20161021

Product data sheet

-

BLF2425M9L30_M9LS30 v.3

BLF2425M9L30_M9LS30 v.3

20160218

Product data sheet

-

BLF2425M9L30_M9LS30#2

BLF2425M9L30_M9LS30#2

20150901

Objective data sheet

-

BLF2425M9L30_M9LS30 v.1

BLF2425M9L30_M9LS30 v.1

20150603

Objective data sheet

-

-