BLF2425M9LS30 datasheet(3/12 Pages) AMPLEON

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BLF2425M9L30_M9LS30

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Product data sheet

Rev. 5 — 13 June 2019

3 of 12

BLF2425M9L30; BLF2425M9LS30

Power LDMOS transistor

5. Thermal characteristics

[1]

When operated with a CW signal.

6. Characteristics

7. Test information

7.1 Ruggedness in class-AB operation

The BLF2425M9L30 and BLF2425M9LS30 are capable of withstanding a load mismatch

corresponding to VSWR = 10 : 1 through all phases under the following conditions:

VDS = 32 V; IDq = 20 mA; PL = 30 W (CW); f = 2450 MHz.

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Typ Unit

Rth(j-case) thermal resistance from junction to case

Tcase =50 C; PL = 30 W

[1] 0.9

K/W

Table 6.

DC characteristics

Tj = 25 C per section; unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

V(BR)DSS drain-source breakdown voltage VGS =0V; ID =0.3 mA

VGS(th)

gate-source threshold voltage

VDS = 10 V; ID = 30 mA

1.4

1.9

2.4

IDSS

drain leakage current

VGS =0V; VDS =32 V

1.4

A

IDSX

drain cut-off current

VGS =VGS(th) + 3.75 V;

VDS =10V

-6.2

IGSS

gate leakage current

VGS = 11 V; VDS = 0 V

140

gfs

forward transconductance

VDS =10V; ID =30mA

0.264 -

RDS(on)

drain-source on-state resistance VGS =VGS(th) + 3.75 V;

ID =1 A

-0.41

0.76



Table 7.

RF characteristics

Test signal: CW at f = 2450 MHz; RF performance at VDS = 32 V; IDq = 20 mA; Tcase = 25 C; unless

otherwise specified; in a class-AB production test circuit.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

power gain

PL = 30 W

18.5 -

RLin

input return loss

PL = 30 W

10

7dB

D

drain efficiency

PL = 30 W

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