NVMFS5H600NL datasheet(1/8 Pages) ONSEMI

номер детали	NVMFS5H600NL

подробное описание детали	MOSFET ??Power, Single N-Channel, DFN5/DFNW5 60 V, 1.3 m, 250 A

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DATA SHEET

www.onsemi.com

September, 2021 − Rev. 3

1

Publication Order Number:

NVMFS5H600NL/D

MOSFET – Power, Single

N-Channel, DFN5/DFNW5

60 V, 1.3 mW, 250 A

NVMFS5H600NL

Features

• Small Footprint (5x6 mm) for Compact Design

• Low RDS(on) to Minimize Conduction Losses

• Low QG and Capacitance to Minimize Driver Losses

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

60

V

Gate−to−Source Voltage

VGS

±20

V

Continuous Drain

Current RqJC

(Notes 1, 3)

Steady

State

TC = 25°C

ID

250

A

TC = 100°C

160

Power Dissipation

RqJC (Note 1)

TC = 25°C

PD

160

W

TC = 100°C

63

Continuous Drain

Current RqJA

(Notes 1, 2, 3)

Steady

State

TA = 25°C

ID

35

A

TA = 100°C

22

Power Dissipation

RqJA (Notes 1, 2)

TA = 25°C

PD

3.3

W

TA = 100°C

1.3

Pulsed Drain Current

TA = 25°C, tp = 10 ms

IDM

900

A

Operating Junction and Storage Temperature

TJ, Tstg

−55 to

+ 175

°C

Source Current (Body Diode)

IS

170

A

Single Pulse Drain−to−Source Avalanche

Energy (IL(pk) = 26 A)

EAS

338

mJ

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case − Steady State

RqJC

0.80

°C/W

Junction−to−Ambient − Steady State (Note 2)

RqJA

38

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

MARKING

DIAGRAM

5H600L

AYWZZ

V(BR)DSS

RDS(ON) MAX

ID MAX

60 V

1.3 mW @ 10 V

250 A

1.7 mW @ 4.5 V

G (4)

S (1,2,3)

N−CHANNEL MOSFET

D (5)

S

G

D

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

5H600L = Specific Device Code

A

= Assembly Location

Y

= Year

W

= Work Week

ZZ

= Lot Traceability

DFN5

CASE 488AA

1

DFNW5

CASE 507BA

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