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NVMFS5H600NL датащи(PDF) 4 Page - ON Semiconductor

номер детали NVMFS5H600NL
подробное описание детали  MOSFET ??Power, Single N-Channel, DFN5/DFNW5 60 V, 1.3 m, 250 A
PDF  8 Pages
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производитель  ONSEMI [ON Semiconductor]
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NVMFS5H600NL датащи(HTML) 4 Page - ON Semiconductor

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TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
60
50
40
30
20
10
0
1E+1
90
70
60
40
30
10
0
0
2
4
6
8
10
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100
10
1
10
100
1000
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.1
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
VDS (V)
TIME IN AVALANCHE (s)
100
10
1
0.1
1
10
100
1000
1
10
VGS = 0 V
TJ = 25°C
f = 1 MHz
CISS
COSS
CRSS
VDS = 30 V
TJ = 25°C
ID = 50 A
QT
QGS
QGD
VGS = 4.5 V
VDS = 30 V
ID = 50 A
td(off)
td(on)
tf
tr
TJ = 125°C
TJ = 25°C
TJ = −55°C
10
TJ(initial) = 100°C
TJ(initial) = 25°C
100E−6
10E−3
RDS(on) Limit
Thermal Limit
Package Limit
500 ms
1 ms
10 ms
1E−3
100
1E+2
1E+3
1E+4
1
3
5
7
9
100
1
20
50
80



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