BLF189XRAS datasheet(4/14 Pages) AMPLEON

4 / 14 page

BLF189XRA_BLF189XRAS

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Product data sheet

Rev. 1 — 6 November 2017

4 of 14

BLF189XRA; BLF189XRAS

Power LDMOS transistor

IDSX

drain cut-off current

VGS =VGS(th) +3.75 V;

VDS =10 V

-91

IGSS

gate leakage current

VGS =11V; VDS = 0 V

280

RDS(on)

drain-source on-state resistance VGS =VGS(th) + 3.75 V;

ID =23.1A

0.066 -



Table 7.

AC characteristics

Tj = 25 C; per section unless otherwise specified.

Symbol Parameter

Conditions

Min Typ

Max Unit

Crs

feedback capacitance

VGS =0V; VDS =50V; f=1MHz

4.9

Ciss

input capacitance

VGS =0V; VDS =50V; f=1MHz

650

Coss

output capacitance

VGS =0V; VDS =50V; f=1MHz

247

Table 8.

RF characteristics

Test signal: pulsed RF; tp =100 s;  = 20 %; f = 108 MHz; RF performance at VDS =50 V;

IDq = 150 mA; Tcase =25 C; unless otherwise specified; in a class-AB production test circuit.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

power gain

PL = 1700 W

24.5

26.2

RLin

input return loss

PL =1700W

14

D

drain efficiency

PL = 1700 W

VGS =0V; f =1MHz.

Fig 2.

Output capacitance as a function of drain-source voltage; typical values per

section

Table 6.

DC characteristics …continued

Tj = 25 C; per section unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max Unit

amp00375

200

400

600

800

1000

VDS (V)

Coss

oss

Coss

(pF)

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