BLF189XRA_BLF189XRAS

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© Ampleon Netherlands B.V. 2017. All rights reserved.

Product data sheet

Rev. 1 — 6 November 2017

3 of 14

BLF189XRA; BLF189XRAS

Power LDMOS transistor

5. Thermal characteristics

[1]

[2]

[3]

See Figure 1.

6. Characteristics

Table 5.

Thermal characteristics

Symbol Parameter

Conditions

Typ

Unit

thermal resistance from junction to case

[1][2] 0.11

K/W

transient thermal impedance from junction

to case

 =20%

0.033 K/W

(1)

 = 1 %

(2)

 = 2 %

(3)

 = 5 %

(4)

 = 10 %

(5)

 = 20 %

(6)

 = 50 %

(7)

 = 100 % (DC)

Fig 1.

Transient thermal impedance from junction to case as a function of pulse

duration

amp00511

1

0

0.04

0.08

0.12

0.16

th(j-c)

(K/W)

(K/W)

(K/W)

(1)

(1)

(1)

(2)

(2)

(2)

(3)

(3)

(3)

(4)

(4)

(4)

(5)

(5)

(5)

(6)

(6)

(6)

(7)

(7)

(7)

Table 6.

DC characteristics

Symbol Parameter

Conditions

Min

Typ

Max Unit

135

-

-

V

gate-source threshold voltage

1.33 1.9

2.33 V

gate-source quiescent voltage

1.11 1.7

2.11 V

drain leakage current

-

-

2.8

A