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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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NVC080N120SC1 датащи(PDF) 5 Page - ON Semiconductor |
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NVC080N120SC1 датащи(HTML) 5 Page - ON Semiconductor |
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5 / 8 page  NVC080N120SC1 www.onsemi.com 4 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS =0V, ID = 1 mA 1200 − − V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 1 mA, referenced to 25_C − 700 − mV/_C Zero Gate Voltage Drain Current IDSS VGS =0V, VDS = 1200 V, TJ =25_C − − 100 mA VGS =0V, VDS = 1200 V, TJ = 175_C − − 250 mA Gate−to−Source Leakage Current IGSS VGS = +25/−15 V, VDS =0V − − ±1 mA ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VGS =VDS, ID = 5 mA 1.8 2.7 4.3 V Recommended Gate Voltage VGOP −5 − +20 V Drain−to−Source On Resistance RDS(on) VGS =20V, ID = 20 A, TJ =25_C − 80 110 mW VGS =20V, ID = 20 A, TJ = 150_C − 114 − Forward Transconductance gFS VDS =20V, ID =20A − 13 − S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = 800 V − 1112 − pF Output Capacitance COSS − 80 − Reverse Transfer Capacitance CRSS − 6.5 − Total Gate Charge QG(tot) VGS = −5/20 V, VDS = 600 V, ID =20A − 56 − nC Gate−to−Source Charge QGS − 11 − Gate−to−Drain Charge QGD − 12 − Gate Resistance RG f = 1 MHz − 1.7 − W SWITCHING CHARACTERISTICS Turn-On Delay Time td(on) VGS = −5/20 V, VDS = 800 V, ID = 20 A, RG = 4.7 W, Inductive Load − 13 − ns Rise Time tr − 20 − Turn−Off Delay Time td(off) − 22 − Fall Time tf − 10 − Turn-On Switching Loss EON − 258 − mJ Turn-Off Switching Loss EOFF − 52 − Total Switching Loss ETOT − 311 − DRAIN−SOURCE DIODE CHARACTERISTICS Continuous Drain−to−Source Diode Forward Current ISD VGS = −5V − − 18 A Pulsed Drain−to−Source Diode For- ward Current (Note 2) ISDM VGS = −5V − − 132 A Forward Diode Voltage VSD VGS = −5V, ISD = 10 A − 4 − V Reverse Recovery Time tRR VGS = −5/20 V, ISD =20A, dIS/dt = 1000 A/ms − 16 − ns Reverse Recovery Charge QRR − 62 − nC Reverse Recovery Energy EREC − 5 − mJ Peak Reverse Recovery Current IRRM − 8 − A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. |
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