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NVC080N120SC1 датащи(PDF) 4 Page - ON Semiconductor |
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NVC080N120SC1 датащи(HTML) 4 Page - ON Semiconductor |
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4 / 8 page ![]() NVC080N120SC1 www.onsemi.com 3 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 1200 V Gate−to−Source Voltage VGS −15/+25 V Recommended Operation Values of Gate− to−Source Voltage TC < 175°C VGSop −5/+20 V Continuous Drain Current RqJC Steady State TC = 25°C ID 31 A Power Dissipation RqJC PD 178 W Continuous Drain Current RqJC Steady State TC = 100°C ID 22 A Power Dissipation RqJC PD 89 W Pulsed Drain Current (Note 2) TC = 25°C IDM 132 A Single Pulse Surge Drain Current Capability TC = 25°C, tp = 10 ms, RG = 4.7 W IDSC 132 A Operating Junction and Storage Temperature Range TJ, Tstg −55 to +175 °C Source Current (Body Diode) IS 18 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 18.5 A, L = 1 mH) (Note 3) EAS 171 mJ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case (Note 1) RqJC 0.84 °C/W 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Repetitive rating, limited by max junction temperature. 3. EAS of 171 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 18.5 A, VDD = 120 V, VGS = 18 V. |
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