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FAM65CR51AXZ2 датащи(PDF) 10 Page - ON Semiconductor

номер детали FAM65CR51AXZ2
подробное описание детали  Boost Converter Stage in APM16 Series for Multiphase and Semi-Bridgeless PFC with SiC Diodes
PDF  14 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
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FAM65CR51AXZ2 датащи(HTML) 10 Page - ON Semiconductor

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FAM65CR51AXZ1, FAM65CR51AXZ2
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TYPICAL CHARACTERISTICS − MOSFETs
1.0E+02
1.0E+03
1.0E+04
1.0E+05
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
Figure 16. Gate Charge Characteristics
Figure 17. ON−Resistance Variation with Drain
Current and Gate Voltage
Qg, GATE CHARGE (nC)
ID, DRAIN CURRENT (A)
160
120
80
40
0
0
2
4
6
8
10
80
60
40
20
0
0.040
0.045
0.050
0.055
0.060
Figure 18. Safe Operating Area
Figure 19. Peak Current Capability
t, RECTANGULAR PULSE DURATION (s)
Figure 20. Peak Power
t, RECTANGULAR PULSE DURATION (sec)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on) Limit
Thermal Limit
Package Limit
1 ms
10 ms
100 ms
100 ms
Single Pulse
Limited IDM 291 A
TC = 25°C
For temperatures above 25°C
Derate peak current as follows:
I + I25
150 * Tc
125
NOTE:
RqJC = 0.27°C/W
Duty Cycle: D = t1/t2
Peak TJ = PDM x ZqJC(t) + TC
VDD = 130 V
VDD = 400 V
TC = 25°C
VGS = 10 V
VGS = 20 V
10 ms
TC = 25°C
RqJC = 0.27°C/W
Single Pulse
0.1
1
10
100
1000
0.1
1
10
100
1000
10
100
1000
0.000001 0.00001 0.0001
0.001
0.01
0.1
1
VGS = 10 V



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