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FAM65CR51AXZ2 датащи(PDF) 9 Page - ON Semiconductor |
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FAM65CR51AXZ2 датащи(HTML) 9 Page - ON Semiconductor |
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9 / 14 page ![]() FAM65CR51AXZ1, FAM65CR51AXZ2 www.onsemi.com 9 TYPICAL CHARACTERISTICS − MOSFETs Figure 10. On−Resistance vs. Gate−to−Source Voltage Figure 11. RDS(norm) vs. Junction Temperature VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) 9.5 8.5 7.5 6.5 5.5 0 50 100 150 200 150 100 75 50 0 −25 −50 −75 0 0.5 1.0 1.5 2.0 2.5 Figure 12. Normalized Gate Threshold Voltage vs. Temperature Figure 13. Normalized Breakdown Voltage vs. Temperature TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) 150 100 75 50 25 0 −25 −75 0.6 0.8 1.0 1.2 0.8 0.9 1.0 1.1 1.2 Figure 14. Eoss vs. Drain−to−Source Voltage Figure 15. Capacitance Variation VDS, DRAIN−TO−SOURCE VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V) 600 500 700 400 300 200 100 0 0 5 10 15 20 25 30 1000 100 10 1 0.1 1 10 100 1k 10k 100k TJ = 150°C TJ = 25°C ID = 20 A 25 125 175 ID = 20 A VGS = 10 V −50 125 175 ID = 3.3 mA ID = 10 A 150 100 75 50 25 0 −25 −75 −50 125 175 VGS = 0 V f = 1 MHz CISS COSS CRSS |
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