STM32G030C8 datasheet(41/94 Pages) STMICROELECTRONICS

41 / 94 page

DS12991 Rev 4

41/94

STM32G030x6/x8

Electrical characteristics

5.3

Operating conditions

5.3.1

General operating conditions

5.3.2

Operating conditions at power-up / power-down

The parameters given in Table 22 are derived from tests performed under the ambient

temperature condition summarized in Table 21.

5.3.3

Embedded reset and power control block characteristics

The parameters given in Table 23 are derived from tests performed under the ambient

temperature conditions summarized in Table 21.

Table 21. General operating conditions

Symbol

Parameter

Conditions

Min

Max

Unit

fHCLK

Internal AHB clock frequency

MHz

fPCLK

Internal APB clock frequency

VDD/DDA Supply voltage

2.0(1)

3.6

VBAT

Backup operating voltage

1.55

3.6

VIN

I/O input voltage

-0.3

Min(VDD + 3.6, 5.5)(2)

Ambient temperature(3)

-40

°C

Junction temperature

-40

105

°C

1. When RESET is released functionality is guaranteed down to VPDR min.

2. For operation with voltage higher than VDD +0.3 V, the internal pull-up and pull-down resistors must be disabled.

3. The TA(max) applies to PD(max). At PD < PD(max) the ambient temperature is allowed to go higher than TA(max) provided

that the junction temperature TJ does not exceed TJ(max). Refer to Section 6.5: Thermal characteristics.

Table 22. Operating conditions at power-up / power-down

Symbol

Parameter

Conditions

Min

Max

Unit

tVDD

VDD slew rate

VDD rising

∞

µs/V

VDD falling

∞

Table 23. Embedded reset and power control block characteristics

Symbol

Parameter

Conditions(1)

Min

Typ

Max

Unit

tRSTTEMPO(2)

POR temporization when VDD crosses VPOR

VDD rising

250

400

μs

VPOR(2)

Power-on reset threshold

2.06

2.10

2.14

VPDR(2)

Power-down reset threshold

1.960

2.00

2.04

Vhyst_POR_PDR

Hysteresis of VPOR and VPDR

Hysteresis in

continuous

mode

-20

Hysteresis in

other mode

-30

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