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STM32L011E4 датащи(PDF) 71 Page - STMicroelectronics

номер детали STM32L011E4
подробное описание детали  Access line ultra-low-power 32-bit MCU Arm®-based Cortex®-M0, up to 16KB Flash, 2KB SRAM, 512B EEPROM, ADC
PDF  119 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STM32L011E4 датащи(HTML) 71 Page - STMicroelectronics

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DocID027973 Rev 5
71/119
STM32L011x3/4
Electrical characteristics
93
Flash memory and data EEPROM
Table 43. Flash memory and data EEPROM characteristics
Symbol
Parameter
Conditions
Min
Typ
Max(1)
1. Guaranteed by design, not tested in production.
Unit
VDD
Operating voltage
Read / Write / Erase
-1.65
-
3.6
V
tprog
Programming time for
word or half-page
Erasing
-
3.28
3.94
ms
Programming
-
3.28
3.94
IDD
Average current during
the whole programming /
erase operation
TA = 25 °C, VDD = 3.6 V
-
500
700
µA
Maximum current (peak)
during the whole
programming / erase
operation
-1.5
2.5
mA
Table 44. Flash memory and data EEPROM endurance and retention
Symbol
Parameter
Conditions
Value
Unit
Min(1)
1. Guaranteed by characterization results, not tested in production.
NCYC(2)
Cycling (erase / write)
Program memory
TA = -40°C to 105 °C
10
kcycles
Cycling (erase / write)
EEPROM data memory
100
Cycling (erase / write)
Program memory
TA = -40°C to 125 °C
0.2
Cycling (erase / write)
EEPROM data memory
2
tRET(2)
2. Characterization is done according to JEDEC JESD22-A117.
Data retention (program memory) after
10 kcycles at TA = 85 °C
TRET = +85 °C
30
years
Data retention (EEPROM data memory)
after 100 kcycles at TA = 85 °C
30
Data retention (program memory) after
10 kcycles at TA = 105 °C
TRET = +105 °C
10
Data retention (EEPROM data memory)
after 100 kcycles at TA = 105 °C
Data retention (program memory) after
200 cycles at TA = 125 °C
TRET = +125 °C
Data retention (EEPROM data memory)
after 2 kcycles at TA = 125 °C



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