Features

·

Floating channel designed for bootstrap operation

Fully operational to +600V

Tolerant to negative transient voltage

dV/dt immune

·

Undervoltage lockout

·

Programmable oscillator frequency

f

=

×+

×

1

1.4 (R

75 ) C

TT

Ω

·

Matched propagation delay for both channels

·

Micropower supply startup current of 90 µA.

·

Shutdown function turns off both channels

·

Low side output in phase with RT

Description

The IR2153Z is a high voltage, high speed, self-oscillating

power MOSFET and IGBT driver with both high and low

side referenced output channels. Proprietary HVIC and

latch immune CMOS technologies enable ruggedized

monolithic construction. The front end features a program-

mable oscillator which is similar to the 555 timer.The

PD-91800

IR2153Z

SELF-OSCILLATING HALF-BRIDGE DRIVER

Product Summary

VOFFSET

600V max.

Duty Cycle

50%

IO+/-

200 mA / 400 mA

Vclamp

15.6V

Deadtime (typ.)

1.2 µs

an internal deadtime designed for minimum driver cross-

conduction. Propagation delays for the two channels are

matched to simplify use in 50% duty cycle applications.

The floating channel can be used to drive an N-channel

power MOSFET or IGBT in the high side configuration

that operates off a high voltage rail up to 600 volts.

Absolute Maximum Ratings

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All

voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissi-

pation ratings are measured under board mounted and still air conditions.

Symbol

Parameter

Min.

Max.

Units

High Side Floating Supply Voltage

-0.3

625

High Side Floating Supply Offset Voltage

High Side Floating Output Voltage

Low Side Output Voltage

-0.3

-0.3

-0.3

Supply Current (Note 1)

—

25

-5

5

Allowable Offset Supply Voltage Transient

—

50

V/ns

—

1.0

Thermal Resistance, Junction to Ambient

—

100

Junction Temperature

-55

125

Storage Temperature

-55

150

°C

Lead Temperature (Soldering, 10 seconds)

—

300

www.irf.com

1

mA

W

°C/W

V