The following table lists the dynamic characteristics per SiC MOSFET of the MSCSM170AM15CT3AG device.

Table 1-3. Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Input capacitance

f = 1 MHz

—

9900

—

pF

Output capacitance

—

450

—

Reverse transfer

capacitance

—

30

—

Total gate charge

—

534

—

nC

Gate-Source charge

—

147

—

Gate-Drain charge

—

81

—

Turn-on delay time

—

24

—

ns

Rise time

—

17

—

Turn-off delay time

—

35

—

Fall time

19

—

Turn-on energy

3.3

—

mJ

Turn-off energy

0.5

—

Internal gate resistance

—

1.95

—

Ω

Junction-to-case thermal resistance

—

—

0.174

°C/W

The following table lists the body diode ratings and characteristics per SiC MOSFET of the MSCSM170AM15CT3AG

device.

Table 1-4. Body Diode Ratings and Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Diode forward voltage

—

3.7

—

V

—

3.9

—

Reverse recovery time

—

27

—

ns

Reverse recovery charge

—

1950

—

nC

Reverse recovery current

—

138

—

A

MSCSM170AM15CT3AG

Electrical Specifications

Datasheet

DS00003932A-page 4