1.

Electrical Specifications

The following sections show the electrical specifications of the MSCSM170AM058CD3AG device.

1.1

SiC MOSFET Characteristics (Per SiC MOSFET)

The following table lists the absolute maximum ratings (per SiC MOSFET) of the MSCSM170AM058CD3AG device.

Table 1-1. Absolute Maximum Ratings

Symbol

Parameter

Maximum Ratings

Unit

Drain-Source voltage

1700

V

Continuous drain current

353

A

281

Pulsed drain current

700

Gate-Source voltage

–10/23

V

Drain-Source ON resistance

7.5

mΩ

Power dissipation

1642

W

The following table lists the electrical characteristics (per SiC MOSFET) of the MSCSM170AM058CD3AG device.

Table 1-2. Electrical Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Zero gate voltage

drain current

—

60

600

µA

Drain-Source on

resistance

—

5.8

7.5

mΩ

—

10.2

—

Gate threshold

voltage

1.8

3.3

—

V

Gate-Source

leakage current

—

—

600

nA

MSCSM170AM058CD3AG

Electrical Specifications

Datasheet

DS00003977A-page 3