LM3D0210 datasheet(4/8 Pages) LEIDITECH

4 / 8 page

P-CH Electrical Characteristics (TJ=25 ℃, unless otherwise)

(1) Absolute max Rating: @TA=25℃ unless otherwise specified

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

-4 ①

ID @ TC = 70°C

Continuous Drain Current, VGS @ 10V

-2.4 ①

IDM

Pulsed Drain Current ②

-30

PD @TC = 25°C

Power Dissipation ③

1.4

VDS

Drain-Source Voltage

-20

VGS

Gate-to-Source Voltage

±8

TSTG

Operating Junction and Storage Temperature Range

-55 to +150

°C

(2) Thermal Resistance

Symbol

Characterizes

Typ.

Max.

Units

RθJA

Junction-to-ambient (t ≤ 10s) ④

—

℃

(3) Electrical Characterizes @TA=25℃ unless otherwise specified

Symbol Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source breakdown voltage

-20

—

VGS = 0V, ID = -250μA

RDS(on)

Static Drain-to-Source on-resistance

—

mΩ

VGS=-4.5V,ID = -4A

—

VGS=-2.5V,ID = -4A

VGS(th)

Gate threshold voltage

-0.3

—

-1.0

VDS = VGS, ID = -250μA

—

-0.44

—

TJ = 125°C

IDSS

Drain-to-Source leakage current

—

-1

μA

VDS = -16V,VGS = 0V

—

-50

TJ = 125°C

IGSS

Gate-to-Source forward leakage

—

μA

VGS =8V

—

-10

VGS = -8V

Total gate charge

—

ID = -4A,

VDS=-10V,

VGS = -4.5V

Qgs

Gate-to-Source charge

—

0.77

—

Qgd

Gate-to-Drain("Miller") charge

—

3.5

—

td(on)

Turn-on delay time

—

VGS=-4.5V, VDS =-10V,

RGEN=3Ω，

Rise time

—

8.6

—

td(off)

Turn-Off delay time

—

Fall time

—

Ciss

Input capacitance

—

939

—

VGS = 0V,

VDS = -10V,

ƒ = 1MHz

Coss

Output capacitance

—

130

—

Crss

Reverse transfer capacitance

—

111

—

Rev 2.0 :

www.leiditech.com

12.01.2019

4/8

LM3D0210

LM3D0210 датащи(PDF) 4 Page - Shanghai Leiditech Electronic Technology Co., Ltd

LM3D0210 датащи(HTML) 4 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Html Pages

1 2 3 4 5 6 7 8

датащи скачать

ссылки URL