поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

Preview PDF HTML

LM3D0210 датащи(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

номер детали LM3D0210
подробное описание детали  N and P-Channel MOSFETS
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
домашняя страница  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM3D0210 датащи(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

  LM3D0210 Datasheet HTML 1Page - Shanghai Leiditech Electronic Technology Co., Ltd LM3D0210 Datasheet HTML 2Page - Shanghai Leiditech Electronic Technology Co., Ltd LM3D0210 Datasheet HTML 3Page - Shanghai Leiditech Electronic Technology Co., Ltd LM3D0210 Datasheet HTML 4Page - Shanghai Leiditech Electronic Technology Co., Ltd LM3D0210 Datasheet HTML 5Page - Shanghai Leiditech Electronic Technology Co., Ltd LM3D0210 Datasheet HTML 6Page - Shanghai Leiditech Electronic Technology Co., Ltd LM3D0210 Datasheet HTML 7Page - Shanghai Leiditech Electronic Technology Co., Ltd LM3D0210 Datasheet HTML 8Page - Shanghai Leiditech Electronic Technology Co., Ltd  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
N-CH Electrical Characteristics (TJ=25 ℃, unless otherwise)
(1) ABSOLUTE MAXIMUM RATINGS(TA=25℃ unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±8
V
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID
6.5
A
IDM
30
A
Maximum Power Dissipation
PD
1.4
W
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
℃
(2) TERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
90
℃
/W
(3) ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
20
V
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±4.5V,VDS=0V
±1
uA
VGS=±8V,VDS=0V
±10
uA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
0.4
0.6
1
V
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=6.5A
18
22
mΩ
VGS=2.5V, ID=5.5A
24
30
mΩ
VGS=1.8V, ID=5A
40
55
mΩ
Forward Transconductance
gFS
VDS=5V,ID=6.5A
7
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=10V,VGS=0V,
F=1.0MHz
1160
PF
Output Capacitance
Coss
200
PF
Reverse Transfer Capacitance
Crss
140
PF
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
VDD=10V,ID=1A
VGS=5V,RGEN=3Ω
6.5
nS
Turn-on Rise Time
tr
13
nS
Turn-Off Delay Time
td(off)
50
nS
Turn-Off Fall Time
tf
30
nS
Total Gate Charge
Qg
VDS=10V,ID=6.5A,
VGS=4.5V
10
nC
Gate-Source Charge
Qgs
2.3
nC
Gate-Drain Charge
Qgd
3
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1A
0.76
1
V
Rev 2.0 :
www.leiditech.com
12.01.2019
2/8
LM3D0210



Html Pages

1 2 3 4 5 6 7 8


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com