ISCP312D datasheet(1/2 Pages) ISC

номер детали	ISCP312D

подробное описание детали	isc Silicon PNP Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

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isc Silicon PNP Power Transistor

ISCP312D

DESCRIPTION

·

Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -50V(Min)

·

High DC Current Gain-

: hFE= 100(Min)@ (VCE= -2V , IC= -3A)

·

Low Saturation Voltage-

: VCE(sat)= -0.3V(Max)@ (IC= -8A, IB= -0.4A)

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

This type of power transistor is developed for high-speed

switching and features a high hFE at low VCE(sat),which is

ideal for use as a driver in DC/DC converters and actuators.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-50

V

VEBO

Emitter-Base Voltage

-7.0

V

IC

Collector Current-Continuous

-5

A

ICM

Collector Current-Pulse

-20

A

PT

Total Power Dissipation @TC=25℃

20

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

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Аналогичный номер детали - ISCP312D

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