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ISCP312D датащи(PDF) 2 Page - Inchange Semiconductor Company Limited

номер детали ISCP312D
подробное описание детали  isc Silicon PNP Power Transistor
PDF  2 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCP312D датащи(HTML) 2 Page - Inchange Semiconductor Company Limited

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isc website:www.iscsemi.com
isc & iscsemi is registered trademark
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isc Silicon PNP Power Transistor
ISCP312D
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -10mA ; IB= 0
-50
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -8A; IB= -0.4A
-0.3
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -8A; IB= -0.4A
-1.2
V
ICBO
Collector Cutoff Current
VCB= -60V ; IE=0
-10
μ
A
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
-10
μ
A
hFE-1
DC Current Gain
IC= -1.5A; VCE= -2V
100
hFE-2
DC Current Gain
IC= -3.0A; VCE= -2V
100
400
hFE-2 Classifications
M
L
K
100-200
150-300
200-400
NOTICE:
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.



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