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AS4LC256K16EO датащи(PDF) 6 Page - Alliance Semiconductor Corporation |
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AS4LC256K16EO датащи(HTML) 6 Page - Alliance Semiconductor Corporation |
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6 / 25 page ![]() ® AS4LC256K16EO 4/11/01; V.1.1 Alliance Semiconductor P. 6 of 25 Write cycle Read-modify-write cycle Std Symbol Parameter -35 -45 -60 Unit Notes MinMax MinMax MinMax tASC Column address setup time 0 – 0 – 0 – ns tCAH Column address hold time 5 – 6 – 10 – ns tAWR Column address hold time to RAS 28 – 35 – 40 – ns tWCS Write command setup time 0 – 0 – 0 – ns 11 tWCH Write command hold time 0 – 0 – 0 – ns 11 tWCR Write command hold time to RAS 28 – 35 – 40 – ns tWP Write command pulse width 5 – 6 – 10 – ns tRWL Write command to RAS lead time 11 – 12 – 12 – ns tCWL Write command to CAS lead time 11 – 12 – 12 – ns tDS Data-in setup time 0 – 0 – 0 – ns 12 tDH Data-in hold time 5 – 6 – 10 – ns 12 tDHR Data-in hold time to RAS 28 – 35 – 45 – ns Std Symbol Parameter -35 -45 -60 Unit Notes Min Max Min Max Min Max tRWC Read-write cycle time 105 – 115 – 120 – ns tRWD RAS to WE delay time 54 – 58 – 60 – ns 11 tCWD CAS to WE delay time 28 – 30 – 30 – ns 11 tAWD Column address to WE delay time 35 – 38 – 40 – ns 11 tRSH(W) CAS to RAS hold time (write) 10 – 10 – 12 – ns tCAS(W) CAS pulse width (write) 15 – 15 – 15 – ns |
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