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AS4LC256K16EO датащи(PDF) 6 Page - Alliance Semiconductor Corporation

номер детали AS4LC256K16EO
подробное описание детали  3.3V 256K X 16 CMOS DRAM (EDO)
PDF  25 Pages
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производитель  ALSC [Alliance Semiconductor Corporation]
домашняя страница  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4LC256K16EO датащи(HTML) 6 Page - Alliance Semiconductor Corporation

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®
AS4LC256K16EO
4/11/01; V.1.1
Alliance Semiconductor
P. 6 of 25
Write cycle
Read-modify-write cycle
Std Symbol Parameter
-35
-45
-60
Unit
Notes
MinMax
MinMax
MinMax
tASC
Column address setup time
0
0
0
ns
tCAH
Column address hold time
5
6
10
ns
tAWR
Column address hold time to RAS
28
35
40
ns
tWCS
Write command setup time
0
0
0
ns
11
tWCH
Write command hold time
0
0
0
ns
11
tWCR
Write command hold time to RAS
28
35
40
ns
tWP
Write command pulse width
5
6
10
ns
tRWL
Write command to RAS lead time
11
12
12
ns
tCWL
Write command to CAS lead time
11
12
12
ns
tDS
Data-in setup time
0
0
0
ns
12
tDH
Data-in hold time
5
6
10
ns
12
tDHR
Data-in hold time to RAS
28
35
45
ns
Std Symbol Parameter
-35
-45
-60
Unit
Notes
Min
Max
Min
Max
Min
Max
tRWC
Read-write cycle time
105
115
120
ns
tRWD
RAS to WE delay time
54
58
60
ns
11
tCWD
CAS to WE delay time
28
30
30
ns
11
tAWD
Column address to WE delay time
35
38
40
ns
11
tRSH(W)
CAS to RAS hold time (write)
10
10
12
ns
tCAS(W)
CAS pulse width (write)
15
15
15
ns



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