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AS4LC256K16EO датащи(PDF) 5 Page - Alliance Semiconductor Corporation

номер детали AS4LC256K16EO
подробное описание детали  3.3V 256K X 16 CMOS DRAM (EDO)
PDF  25 Pages
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производитель  ALSC [Alliance Semiconductor Corporation]
домашняя страница  https://www.alliancememory.com
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AS4LC256K16EO датащи(HTML) 5 Page - Alliance Semiconductor Corporation

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AS4LC256K16EO
4/11/01; V.1.1
Alliance Semiconductor
P. 5 of 25
AC parameters common to all waveforms
Read cycle
Std Symbol Parameter
-35
-45
-60
Unit
Notes
Min
Max
Min
Max
Min
Max
tRC
Random read or write cycle time
50
–
80
–
100
–
ns
tRP
RAS precharge time
15
–
20
–
20
–
ns
tRAS
RAS pulse width
35
75K
45
75K
60
75K
ns
tCAS
CAS pulse width
6
–
10
–
10
–
ns
tRCD
RAS to CAS delay time
12
18
18
32
15
45
ns
6
tRAD
RAS to column address delay time
8
14
13
23
15
30
ns
7
tRSH(R)
CAS to RAS hold time (read cycle)
10
–
10
–
12
–
ns
tCSH
RAS to CAS hold time
35
–
45
–
60
–
ns
tCRP
CAS to RAS precharge time
5
–
5
–
5
–
ns
tASR
Row address setup time
0
–
0
–
0
–
ns
tRAH
Row address hold time
6
–
8
–
9
–
ns
tT
Transition time (rise and fall)
1.5
50
1.5
50
1.5
50
ns
4,5
tREF
Refresh period
–
8
–
8
–
8
ms
3
tCLZ
CAS to output in low Z
0
–
3
–
3
–
ns
8
Std Symbol
Parameter
-35
-45
-60
Unit
Notes
Min
Max
Min
Max
Min
Max
tRAC
Access time from RAS
–35
–
45
–
60
ns
6
tCAC
Access time from CAS
–
7
–
10
–
10
ns
6,13
tAA
Access time from address
–
17
–
22
–
30
ns
7,13
tAR(R)
Column add hold from RAS
28
–
35
–
40
–
ns
tRCS
Read command setup time
0
–
0
–
0
–
ns
tRCH
Read command hold time to CAS
0–
0
–
0
–
ns
9
tRRH
Read command hold time to RAS
0–
0
–
0
–
ns
9
tRAL
Column address to RAS Lead time
18
–
25
–
30
–
ns
tCPN
CAS precharge time
4
–
5
–
5
–
ns
tOFF
Output buffer turn-off time
0
8
0
10
0
10
ns
8,10



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