WSF3055 datasheet(2/10 Pages) WIINSOK

номер детали	WSF3055

подробное описание детали	Motor Control. Protable equipment application.

PDF	10 Pages

Scroll/Zoom	100%

производитель	WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]

домашняя страница	http://www.winsok.tw/index.html

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2 / 10 page

N Channel Electrical Characteristics (T= 25°C unless otherwise noted)

Min.

Typ.

Max.

BVDSS

Drain-Source Breakdown Voltage

TJ=85°C

VGS(th)

Gate Threshold Voltage

1.3

1.8

2.3

IGSS

Gate Leakage Current

±100

-15

mΩ

-18

mΩ

VSD

Diode Forward Voltage

0.3

0.4

0.55

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

3.5

Gate Resistance

3.3

Ω

Ciss

Input Capacitance

395

514

Coss

Output Capacitance

105

Crss

Reverse Transfer Capacitance

td(ON)

Turn-on Delay Time

5.5

Turn-on Rise Time

10.5

td(OFF)

Turn-off Delay Time

Turn-off Fall Time

3.7

Total Gate Charge

8.3

12.5

Qgs

Gate-Source Charge

1.1

Qgd

Gate-Drain Charge

1.8

Note d：Pulse test ; pulse width:≤300μs, duty cycle≤2%.

Note e：Guaranteed by design, not subject to production testing.

VDS=15V,VGS=4.5V, IDS=4A

VDS=15V, VGS=10V,

IDS=4.0A

VDS=24V, VGS=0V

VGS=0V, VDS=15V,

Frequency=1.0MHz

VDD=15V, RL=15 , I

=1A,

VGEN=10V, RG=6　

Gate Charge Characteristics e

Diode Characteristics

ISD=1A, VGS=0V

ISD=4.0A, dlSD/dt=100A/μs

Dynamic Characteristics e

VGS=0V,VDS=0V,f=1MHz

VDS=VGS, IDS=250μA

VGS=±20V, VDS=0V

RDS(ON) d

Drain-Source On-state Resistance

VGS=10V, IDS=9A

VGS=4.5V, IDS=8A

Static Characteristics

VGS=0V, IDS=250μA

IDSS

Zero Gate Voltage Drain Current

Symbol

Parameter

Test Conditions

N Channel

Unit

WSF3055

N-Ch and P-Channel MOSFET

Page 2

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Rev1.0 May.2020

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