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WSF3055 датащи(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSF3055 датащи(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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1 / 10 page ![]() Product Summery VDS RDS(ON) ID 30 15mΩ 24A operation with gate voltages as low as 4.5V.This device -30 11mΩ -19.8A Application Motor Control. Protable equipment application. Synchronous Rectification. TO-252 Pin Configuration 2,Re liable and Rugged Absolute Maximum Ratings (T= 25°C unless otherwise noted) Symbol N Channel P Channel Unit VDSS 30 -30 VGSS ±20 ±20 TC=25°C 24 -19.8 TC=100°C 15 -12.6 TC=25°C TC=100°C TA=25°C 9 -7.6 TA=70°C 7.3 -6 IDM a Pulsed Drain Current TA=25°C 36 -30.4 A TA=25°C TA=70°C IS Diode Continuous Forward Current TC=25°C 3 -3 A TJ TSTG RƟJC Thermal Resistance-Junction to Case Steady State °C/W t ≤10s °C/W Steady State °C/W IAS c Avalanche Current, Single pulse L=0.1mH 13 19 A EAS c Avalanche Energy, Single pulse L=0.1mH 8.5 18 mJ Note a:Pulse width limited by max. junction temperature. Note b:Surface mounted on 1in2 pad area. Note c:UIS tested and pulse width limited by maximum junction temperature 150 °C(initial temperature Tj=25°C) °C Storage Temperature Range -55 to 150 W 7.6 Parameter Drain-Source Voltage V Gate-Source Voltage Description 6.6 ID Continuous Drain Current A PD Maximum Power Dissipation 2.78 W 1.78 ID Continuous Drain Current A PD Maximum Power Dissipation 18.9 3,Lead Free Available (RoHS Compliant) 1,100 % U IS + Rg Tested RƟJA b Thermal Resistance-Junction to Ambient 45 95 Maximum Junction Temperature 150 Switching application provide excellent RDS(ON), low gate charge and is suitable for use as a Battery protection or in other The WSF3055 uses advanced trench technology to Features WSF3055 N-Ch and P-Channel MOSFET Page 1 www.winsok.tw Rev1.0 May.2020 |
Аналогичный номер детали - WSF3055 |
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Аналогичное описание - WSF3055 |
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