STPSC40H12CWY datasheet(4/10 Pages) STMICROELECTRONICS

номер детали	STPSC40H12CWY

подробное описание детали	40 A 1200 V power Schottky silicon carbide diode

PDF	10 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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4 / 10 page

1.1

Characteristics (curves)

Figure 1. Forward voltage drop versus forward current

(typical values, per diode)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VF(V)

Ta = 150 °C

Pulse test : tp = 500 µs

Ta = 25 °C

Ta = -40 °C

IF(A)

Figure 2. Reverse leakage current versus reverse voltage

applied (typical values, per diode)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

100

200

300

400

500

600

700

800

900 1000 1100 1200

VR(V)

Tj = 25 °C

Tj = 150 °C

IR(µA)

Figure 3. Peak forward current versus case temperature

(per diode)

100

120

140

100

125

150

175

Tc (°C)

δ= tp/T

δ = 0.1

δ = 0.3

δ = 0.5

δ = 1

δ = 0.7

IM(A)

Figure 4. Junction capacitance versus reverse voltage

applied (typical values, per diode)

200

400

600

800

1000

1200

1400

1600

1800

0.1

100

1000

10000

VR (V)

F = 1 MHz

VOSC = 30 mVRMS

Tj = 25 °C

Cj(pF)

Figure 5. Relative variation of thermal impedance junction

to case versus pulse duration

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

tP(s)

Zth(j-c) /Rth(j-c)

Single pulse

Figure 6. Non-repetitive peak surge forward current

versus pulse duration (sinusoidal waveform, per diode)

1.E+02

1.E+03

1.E-05

1.E-04

1.E-03

1.E-02

Ta= 25 °C

Ta= 150 °C

IFSM (A)

tp(s)

STPSC40H12C-Y

Characteristics (curves)

DS13623 - Rev 1

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