STPSC40H12CWY datasheet(2/10 Pages) STMICROELECTRONICS

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Characteristics

Table 1. Absolute ratings (limiting values per diode at 25 °C , unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage (Tj = -40 °C to +175 °C)

1200

IF(RMS)

Forward rms current

IF(AV)

Average forward current

Tc = 150 °C, DC current

Per diode

Per device

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

Tc = 25 °C

140

tp = 10 ms sinusoidal

Tc = 150 °C

120

Tstg

Storage temperature range

-55 to +175

°C

Operating junction temperature range

-40 to +175

°C

Table 2. Thermal resistance parameters

Symbol

Parameter

Value

Unit

Typ.

Max.

Rth(j-c)

Junction to case

Per diode

0.40

0.55

°C/W

Per device

0.20

0.28

For more information, please refer to the following application note:

•

AN5088: Rectifiers thermal management, handling and mounting recommendations

Table 3. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR (1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

120

µA

Tj = 150 °C

800

VF (2)

Forward voltage drop

Tj = 25 °C

IF = 20 A

1.35

1.50

Tj = 150 °C

1.75

2.25

1. Pulse test: tp = 10 ms, δ < 2%

2. Pulse test: tp = 500 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 1.07 x IF(AV) + 0.059 x IF 2(RMS)

For more information, please refer to the following application notes related to the power losses:

•

AN604: Calculation of conduction losses in a power rectifier

•

AN4021: Calculation of reverse losses on a power diode

STPSC40H12C-Y

Characteristics

DS13623 - Rev 1

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