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FUSB251 датащи(PDF) 5 Page - ON Semiconductor |
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FUSB251 датащи(HTML) 5 Page - ON Semiconductor |
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5 / 19 page ![]() FUSB251 www.onsemi.com 5 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Conditions Min Typ Max Units TJ Junction Temperature −40 +150 °C TSTG Storage Temp −65 +150 °C VDD Supply voltage Slew Rate 2 V/ms (rising), 1 V/ms (falling) −0.5 12.0 V VCC Vccx to GND −0.5 24 V VSBU VSBUx to GND −0.5 24 V VCCx_H and VSBUx_H VCCX_H, VSBUx_H to GND −0.5 6.0 V ICCSW DC CC switch current 1.25 A ISBUSW DC SBU switch current 100 mA IIK DC input diode current −50 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ESD RATINGS − JEDEC / IEC SPECIFICATION Electro Static Discharge (ESD) Specifications Condition Value Unit Human Body Model, JEDEC JESD22−A114 CCx and SBUx pins to GND ±5000 V Other pins ±2000 Charged Device Model, JEDEC JESD22−C101 All pins ±1000 IEC 61000−4−2 System ESD CCx and SBUx pins to GND Air−gap Discharge ±15000 Contact Discharge ±8000 IEC 61000−4−5 Lightning and Surge CCx and SBUx pins to GND ±35 OPERATING CONDITIONS Symbol Parameter Conditions MIn Typ Max Unit VDD Supply Voltage Range 2.7 3.8 5.5 V TA Operating Ambient Temperature −40 +85 °C TIN + 0.3 Junction Temperature −40 +125 °C VCCx, VCCx_H CC1 CC2, CC1_H, CC2_H voltage 0 5.5 V VSBUx, VSBUx_H SBU1, SBU2, SBU1_H, SBU2_H voltage 0 4.2 V C_CAP External capacitor capacitance 0.1 1.0 mF VPU Pull up resistor power rail of SDA, SCL and INTB 1.7 VDD V ICCSW CC switch current TA = 25°C and TA = 85°C 1000 (TA = 25°C), 800 (TA = 85°C) mA ISBU SBU switch current 50 mA Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. |
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